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P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075 (max) Ultra High-Speed Switching SOP - 8 Package
Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems
General Description
The XP132A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.075 ( Vgs = -4.5V ) Rds (on) = 0.115 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP - 8
Pin Configuration
S S S G 1 2 3 4 8 7 6 5 D D D D
Pin Assignment
PIN NUMBER 1-3 4 5-8 PIN NAME S G D FUNCTION Source Gate Drain
u
SOP - 8 Top View
Equivalent Circuit
Absolute Maximum Ratings
Ta=25 OC PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 + 12 -5 -20 -5 2.5 150 -55 to 150 UNITS V V A A A W
O
1 2 3 4
8 7 6 5
Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
C C
O
P - Channel MOS FET ( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
Electrical Characteristics
DC characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20 , Vgs = 0V Vgs = 12 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 3A , Vgs = - 4.5V Id = - 3A , Vgs = - 2.5V Id = - 3A , Vds = - 10V If = - 5A , Vgs = 0V - 0.5 0.06 0.092 8 - 0.85 - 1.1 MIN TYP MAX - 10 1 - 1.2 0.075 0.115 Ta=25C UNITS A A V S V
Dynamic characteristics
PARAMETER SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 770 440 180 MAX Ta=25C UNITS pF pF pF
u
Input Capacitance Output Capacitance Feedback Capacitance
Switching characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 3A Vdd = - 10V CONDITIONS MIN TYP 10 25 45
40
MAX
Ta=25C UNITS ns ns ns ns
Thermal characteristics
PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C / W
Electrical Characteristics
Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage
Drain Current :Id (A)
Drain / Source Voltage :Vds (V)
Drain Current :Id (A)
Gate / Source Voltage :Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Drain/Source On-State Resistance :Rds (on) ( ) Drain/Source On-State Resistance :Rds (on) ( )
Drain/Source On-State Resistance vs. Drain Current
u
Gate/Source Voltage :Vgs (V)
Drain Current :Id (A)
Drain / Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance :Rds (on) ( ) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V)
Gate / Source Cut Off Voltage Variance vs. Ambient Temp.
Ambient Temp. :Topr ( )
Ambient Temp. :Topr ( )
Electrical Characteristics
Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current
Drain/Source Voltage:Vds (V)
Switching Time:t (ns)
Capacitance:C (pF)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Reverse Drain Current vs. Source/Drain
Gate/Source Voltage:Vgs (V)
u
Gate Charge:Qg (nc)
Reverse Drain Current:Idr (A)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal resistance: s(t)
Pulse Width:PW (sec)

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